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فیلتر نتایج
نتایج 1 تا 10 از مجموع 13
1
2
Journal Paper
Numerical optimization of threshold voltage and off-current of a nano-scale symmetric double gate MOSFET based on the genetic algorithm: Various strategies compatible with device applications
Authors:
Yazdan Karimi Pashaki
،
Seyed Ali Sedigh Ziabari
،
Abdollah Eskandarian
،
Ali Rahnamaei
Year 1402
Publish place:
International Journal of Nano Dimension Issue 1، Vol 14
Pages:
12
| Language: English
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Journal Paper
Effect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL)
Authors:
Abbas Ghadimi
،
Mohamad Ahmadzadeh
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 5
Pages:
16
| Language: English
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Journal Paper
Improvement of the Drive Current in ۵nm Bulk-FinFET Using Process and Device Simulations
Authors:
Payman Bahrami
،
Mohammad Reza Shayesteh
،
Majid Pourahmadi
،
Hadi Safdarkhani
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 5
Pages:
18
| Language: English
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Journal Paper
بررسی مقادیر طبیعی و تکرارپذیری آستانه درک جریان الکتریکی در فیبرهای حسی
Authors:
Reza Salman-Roghani
،
Afshin Adib
Year 1385
Publish place:
Archives of Rehabilitation Issue 1، Vol 7
Pages:
5
| Language: Persian
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Journal Paper
Simulation of the Process of LDMOS Transistor Manufacture and Optimizing it to Increase the Current of Work
Authors:
Payman Bahrami
،
Mohammad Reza Shayesteh
،
Mohammad Eslami
Year 1396
Publish place:
majlesi Journal of Electrical Engineering Issue 4، Vol 11
Pages:
7
| Language: English
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Conference Paper
A novel Approach for optimal reconfiguration of power distributed networks considering technical criteria and uncertainties of the network in the presence of distributed generations
Authors:
Esmaeil Zahmatkeshan
،
Jafar Bakhshizadeh
،
Hasan Arghavani
،
Alireza Motavallinezhad
Year 1401
Publish place:
The 10th CIRED Regional Conference
Pages:
9
| Language: English
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Journal Paper
طراحی و ساخت دستگاه اندازه گیری دز پرتوهای گاما با استفاده از ترانزیستورهای ماسفت براساس جابه جایی ولتاژ آستانه
Authors:
سعید بوربور
،
حمید جعفری
Year 1399
Publish place:
Iranian Journal of Radiation Safety and Measurement Issue 1، Vol 9
Pages:
10
| Language: Persian
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Journal Paper
تحریک پذیری پایانه های آکسونی در تحریک خارج سلولی: بررسی تاثیر مشخصات هندسی پایانه ها
Authors:
مرضیه باقری
،
امین مهنام
،
زیبا رجایی
Year 1393
Publish place:
Advances in Cognitive Sciences Issue 4، Vol 16
Pages:
10
| Language: Persian
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Conference Paper
Optimization of Quantum Well Structure to Enhance Output Power for an AlGaAs-Based Laser Diode
Authors:
Zahra Danesh Kaftroudi
Year 1398
Publish place:
3rd International Conference on Soft Computing
Pages:
6
| Language: English
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Journal Paper
A Simple General-purpose I-V Model for All Operating Modes of Deep Submicron MOSFETs
Authors:
Gholamreza Ardeshir
،
Sepideh Valiollahi
Year 1396
Publish place:
International Journal of Engineering (IJE) Issue 2، Vol 31
Pages:
8
| Language: English
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نتایج 1 تا 10 از مجموع 13
1
2