Design of a Mixer for ۵G applications

Publish Year: 1400
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:

ISCEE20_073

تاریخ نمایه سازی: 6 مهر 1400

Abstract:

In this paper we are going to design an ultra wideband mixer for ۵G applications. In this paper we have designed a ۵G mixer that it has a noise figure (NF) between ۹- ۱۵dB and a gain of ۲۰ dB in the operating frequency of ۲۹ GHz. In this paper the proposed mixer is designed in TSMC ۱۸۰nm. has a reversed Isolation of -۱۰ dB in this frequency and it has a OP۱dB of ۲۵ dBm in the RF port of ۲۰dBm. The IP۳ of the proposed mixer is about ۵۰dBm. The techniques that we have used for designing the proposed mixer is the current mirror PMOS transistors with inductive degeneration in current mirror transistors to increase the gain and improve linearity .and inductive source degeneration technique is used to improve the IP۳.

Authors

Mohammad Mohammadi

University of Zanjan, Department of engineering, Faculty of electrical engineering