Calculating the band structure of ۳C-SiC using sp۳d۵s* + ∆ model
Publish Year: 1398
نوع سند: مقاله ژورنالی
زبان: English
View: 102
This Paper With 6 Page And PDF Format Ready To Download
- Certificate
- من نویسنده این مقاله هستم
استخراج به نرم افزارهای پژوهشی:
شناسه ملی سند علمی:
JR_JTAP-13-1_001
تاریخ نمایه سازی: 24 بهمن 1400
Abstract:
AbstractWe report on a semiempirical tight-binding model for ۳C-SiC including the effect of sp۳d۵s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of ۳C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses.
Keywords: