Room temperature dielectric and antibacterial behavior of thiosemicarbazide capped low dimension Silver and Gold nanoparticles

Publish Year: 1396
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:

JR_IJND-8-4_001

تاریخ نمایه سازی: 24 تیر 1401

Abstract:

Room temperature dielectric and antibacterial behavior of thiosemicarbazide capped low dimension Silver and Gold nanoparticles were studied. The effect of size on the properties, by capping silver (Ag) and gold (Au) nanoparticles by thiosemicarbazide (TSC) was investigated. The nanoparticles were synthesized by chemical reduction method. The structural formation, surface morphology, phase stability and crystalline nature were characterized by UV-Vis spectroscopy, Fourier transform Infra Red (FT-IR) spectroscopy, Differential Scanning Calorimeter (DSC), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Powder X-ray Diffraction (PXRD). Room temperature dielectric and Impedance spectroscopy were performed to understand the electrical transport behavior and the results indicated that TSC capped Ag nanoparticles have demonstrated better electrical properties. Also, antibacterial studies were performed on human pathogenic bacteria by agar well diffusion method which attested TSC capped Ag nanoparticles have better antibacterial properties.

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Authors

Bhagavathula Diwakar

Department of Engineering Chemistry, SRKR Engineering College, Chinna Amiram, India-۵۳۴۲۰۴.

Boddeti Govindh

Organic Research Lab, Department of Organic Chemistry, Andhra University, Visakhapatnam, India-۵۳۰۰۰۳.

Devarapu Sekhar

Department of Engineering Chemistry, SRKR Engineering College, Chinna Amiram, India-۵۳۴۲۰۴.

Penmetsa Bhavani

Department of Engineering Chemistry, SRKR Engineering College, Chinna Amiram, India-۵۳۴۲۰۴.

Veluri Swaminadham

Department of Physics, Swarnandhra College of Engineering and Technology, Narsapur, A.P., India –۵۳۴ ۲۸۰.

Kondareddy Anjireddy

Department of Engineering Chemistry, SRKR Engineering College, Chinna Amiram, India-۵۳۴۲۰۴.

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