Light-Emitting Diodes Based on Van Der Waals Heterostructures: a Review
Publish Year: 1402
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_IJMSEI-20-2_005
تاریخ نمایه سازی: 28 خرداد 1402
Abstract:
The introduction of the ۲D materials in recent years has resulted in an emerging type of the constructed structures called van der Waals heterostructures (vdWHs) that take advantage of the ۲D materials in forming atomically thin components and devices. The vdWHs are constructed by the stacking of ۲D materials by van der Waals interactions or edge covalent boning. The electron orbitals of the ۲D layers in vdWHs extend to each other and influence the electronic band structures of the constituent layers. The tunable optical response over a wide range of the wavelengths (NIR to visible) can be obtained by assembling vdWHs through combining of the monolayers. By application of ۲D layers in vdWHs, p-n heterojunctions without lattice mismatch can be formed. The photodiodes based on the van der Waals interactions could be considered as promising candidates for future optoelectronic devices. Furthermore, on-chip quantum optoelectronics can move to the next generation by using ۲D materials in vdWHs. In this review, the vdWHs are introduced and their properties and applications in light-emitting diodes (LEDs) have been discussed. The vdWHs allow bandgap engineering, and hence, LEDs working in a range of the wavelengths can be realized. The applications of vdWHs in forming atomically thin components in optoelectronic devices and LEDs have been addressed.
Keywords:
Van der Waals heterostructures , ۲D materials , band structure , bandgap tuning , light-emitting diode
Authors
Mohammad Jafar Molaei
Department of Chemical and Materials Engineering, Shahrood University of Technology, Shahrood ۳۶۱۹۹۹۵۱۶۱, Iran
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