Investigating the methods of improving the performance of field effect diode for use in nanotechnology
Publish place: The second conference of electricity, mechanics, aerospace, computer and engineering sciences
Publish Year: 1402
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
EMAECONF02_032
تاریخ نمایه سازی: 31 خرداد 1402
Abstract:
Another field-effect diode, or FET, is used in modern electronic circuit components such as telecommunications chips, amplifiers, and other electronic devices. The main goal of improving the performance of the field effect diode is to increase the power and reduce the noise factor in these devices. In order to improve the performance of the field effect diode, there are several methods, some of which are mentioned below:۱- Design improvement: By optimizing the design of the field effect diode, its performance can be improved.۲- Improving the manufacturing process: By improving the manufacturing process of the field effect diode, more quality and accuracy can be obtained in the manufacturing of these devices. ۳- Use of optimal materials: by using optimal materials in the manufacture of field effect diode, its performance can be improved.۴- Improving the structure: by improving the structure of the field effect diode, its performance can be improved.
Keywords:
Field Effect Diode (FED) , Side Contacted FED (S-FED) , Band-To-Band-Tunneling(BTBT) , ION/IOFF Ratio
Authors
Eslam Dost Amir Mahdi
Student of Electronic Engineering,Chamran University,Guilan.iran
Khoshnud Mostafa
Electronice Engineering Department,Chamran University,Guilan.Iran