Effect of hydrostatic pressure on the Auger recombination rate of InGaN/GaN multiple quantum well laser diode

In this study, a numerical model was used to analyze the Auger recombination rate in c-plane InGaN/GaN multiple-‎quantum-well lasers(MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire ‎energy eigenvalues and their corresponding eigenfunctions of ‎ MQWLD, and the hole eigenstates ‎were calculated via a ۶‎×۶ k.p method under applied hydrostatic pressure. It was found that a change in pressure ‎up to ۱۰ GPa increases the carrier density up to‎ ‎۰.۷۵×۱۰۱۹ cm-۳ and ‎۰.۵۶×۱۰۱۹cm-۳ ‎ for the holes and electrons, ‎respectively, and the effective band gap. Based on the result, it could decrease the exaction binding energy, rise the ‎electric field rate up to ۰.۷۷ MV/cm ‎, and decrease the Auger recombination rate up to ۰.۶‎×۱۰۲۷cm۳s-۱ in the ‎multiple-quantum well regions. Also, calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger recombination rate had the largest contribution to the Auger recombination rate. Our ‎studies provided more detailed insight into the origin of the Auger recombination rate drop under hydrostatic ‎pressure in InGaN-based LEDs.‎

Keywords:

Auger Recombination , Overlap integrals , Laser diode , multi-quantum well