Effects of the Channel Length on the Nanoscale Field Effect Diode Performance

Field Effect Diode (FED)s are interesting device in providing the higherON-state current and lower OFF–state current in comparison with SOI-MOSFETstructures with similar dimensions. The impact of channel length and band-to-bandtunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has beeninvestigated in this paper. To find the lowest effective channel length, this device issimulated with ۷۵, ۵۵ and ۳۵ nm channel length and the results obtained are presentedin this article. Our numerical results show that the ION/IOFF ratio can be varied from ۱۰۴to ۱۰۰ for S-FED as the channel lengths decrease. We demonstrate that for channellengths shorter than ۳۵ nm by considering the Band-to-Band tunneling model, the SFEDdevice does not turn off.

Keywords:

Field Effect Diode (FED) , Side Contacted FED (S-FED) , Band-To- Band-Tunneling (BTBT) , ION/IOFF Ratio