Growth and characterization of tungsten disulfide monolayer using solution precursor-assisted chemical vapor depositionmethod

Transition metal dichalcogenides (TMDs) have attracted significant attention due to their uniqueoptical and electronic properties, positioning them as promising candidates for various electronicand optoelectronic devices such as sensors, transistors, and batteries. However, the synthesis ofthese materials has always posed challenges, particularly in terms of achieving uniformity andcontrolling the precursor vapor during the synthesis procedure. In this study, we addressed thesechallenges by utilizing a soluble precursor. This approach enabled us to grow high-quality,monolayer tungsten disulfide flakes on SiO۲/Si substrates using the chemical vapor deposition(CVD) method. By examining and adjusting various growth parameters such as growth temperature,solution precursor concentration, and substrate position, we successfully optimized the growthconditions. To characterize the monolayer flakes, we employed Raman and photoluminescence (PL)spectroscopies.

Keywords:

transition metal dichalcogenides , chemical vapor deposition , tungsten disulfide