Novel p-type Silicon Solar Cells with Oxide and Localized Contact

The standard p-type silicon (Si) absorber-based solar cell is undergoing a transition from a full-area aluminum back surface field (Al-BSF) to a passivated emitter rear cell (PERC) structure with a localized back contact, as discussed earlier. To achieve improved efficiency in p-type Si cells, optimizing the rear side passivation with oxide and localized contact structures is essential. In this paper, the novel p-type Si solar cells with oxide and localized contact are investigated. One proposed design for a rear-surface passivated p-Si solar cell with localized contacts suggests that the area of the localized contacts should be limited to around ۵% of the full rear surface area. Additionally, the doping concentration of the absorber and emitter should be chosen to be approximately ۴×۱۰۱۵ cm-۳ and ۱×۱۰۱۸ cm-۳, respectively, in order to achieve improved device efficiency. By considering a rear contact to non-contact ratio of ۰.۰۵, a fixed charge density of ۲×۱۰۱۲ cm-۲, and a ۱۰-۲۰ nm thick Al۲O۳ passivating layer, it is feasible to achieve a maximum efficiency of around ۲۴.۵% with a higher VOC of approximately ۷۰۰ mV.

Keywords:

p-type silicon , Passivated emitter rear cell (PERC) , Oxide and Localized Contact , Solar cells