Novel Hetero Material-based Charge Plasma TFET (H-CPTFET)

In this paper, a comparative study of a novel hetero charge plasma TFET (H-CPTFET) is explored using ۲D-ATLAS Silvaco simulations, to overcome the problem of RDFs and fabrication related issues. It is shown that the use of hetero-material in the device enables the lowering of band gap at the source/channel interface which increases the tunneling rate of charge carriers and hence improves the drain current (Ids) and transconductance (gm), resulting in better current driving capability for the device. The proposed device (H-CPTFET) resolves the fabrication issues of doping profile complexity, thermal budget and is also cost effective. The cut-off frequency (fT) and gain-bandwidth product (GBP) attain peak at lower Vgs, which signifies the usability of the device for low power analog and CMOS applications. Hence, the proposed structure shows the potentiality of the device for improved DC and analog/RF performances.

Keywords:

Hetero material , Charge plasma , Cut-off frequency , Gain-bandwidth product , TFET