Photocurrent Response Characteristics of ZnO/TiO۲ Nano Thin Films on Si/SiO۲ Substrate Using Sol-Gel Method
Publish place: Chemical Review and Letters، Vol: 6، Issue: 4
Publish Year: 1402
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_CHRL-6-4_008
تاریخ نمایه سازی: 8 مرداد 1403
Abstract:
The Sol-Gel method synthesizes ZnO@TiO۲ thin film structures on Si/SiO۲ substrates, particularly enhancing photocurrent response and photovoltaic characteristics. Using the Sol-Gel method, the study aims to provide insights into the features and implications of the photocurrent response under visible light illumination. Examining various parameters such as current amplitude, resistivity, rise time, fall time, rise time to fall time ratio, and photocurrent amplitude to rise time/fall time ratio, this research seeks to understand the performance of the synthesized thin film structures. Among the studied delicate film structures, the hybrid ZnO: TiO۲ exhibits the highest current responsiveness, while TiO۲ and TiO۲/ZnO demonstrate dark everyday phenomena. These findings hold significance for optimizing the design of photovoltaic devices utilizing the Sol-Gel method. By investigating ZnO@TiO۲ thin film structures on Si/SiO۲ substrates using the Sol-Gel method, this research provides valuable insights into these structures' performance and potential applications in photovoltaics. The results contribute to advancing renewable energy technologies and guide the development of efficient photovoltaic devices.
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Authors
AHMED AUDA
College of Science, University of Babylon, IRAQ
HIKMAT A. J. BANIMUSLEM
Department of Physics, College of Science, University of Babylon, Babylon, IRAQ
BURAK Y. KADEM
Department of Physics, College of Science, Al-Karkh University of Science, Baghdad, IRAQ