Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses.
Publish place: Journal of Solid Mechanics، Vol: 16، Issue: 1
Publish Year: 1402
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JSMA-16-1_004
تاریخ نمایه سازی: 29 مرداد 1403
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Authors
A Boussaha
Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna ۲ Mostafa Ben Boulaid, Batna, Algeria
Rafik Makhloufi
Mechanical Engineering Department, University of Batna۲, Algeria
R Benbouta
Department of Mechanical Engineering, Faculty of Technology, University of Batna۲, Algeria
Mourad BRIOUA
Faculty of Technology, University of Batna ۲, Algeria