Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses.

Publish Year: 1402
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:

JR_JSMA-16-1_004

تاریخ نمایه سازی: 29 مرداد 1403

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A Boussaha

Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna ۲ Mostafa Ben Boulaid, Batna, Algeria

Rafik Makhloufi

Mechanical Engineering Department, University of Batna۲, Algeria

R Benbouta

Department of Mechanical Engineering, Faculty of Technology, University of Batna۲, Algeria

Mourad BRIOUA

Faculty of Technology, University of Batna ۲, Algeria