Improving performance and stability of silver bismuth iodide solar cells using carbon nanotubes in the hole transport layer

Publish Year: 1401
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:

JR_PPAM-2-2_006

تاریخ نمایه سازی: 26 شهریور 1403

Abstract:

Silver bismuth iodide (SBI) materials are low-toxic, air-stable, and suitable for replacing lead-based perovskite ones. In this work, the photovoltaic characteristics of SBI-based solar cells with different hole transport layers (HTL) were investigated. Results showed that the power conversion energy (PCE) of Silver bismuth iodide-based solar cells with P۳HT as HTL was higher than spiro-OMeTAD. Also, the influence of CNT as a dopant on the performance and stability of the devices was studied. CNT doping of silver bismuth iodide increased the Voc and so the efficiency of the solar cell was enhanced. Furthermore, Also, CNT-doped P۳HT improves the interface contact between the active layer and HTL and increases the conductivity of HTL. The best PCE of about ۲.۱۶% for devices with FTO/c-TiO۲/m-TiO۲/silver bismuth iodide-CNT/P۳HT-CNT/Au structure was obtained. Moreover, the stability of solar cells under environmental conditions after ۳۰ days was investigated. All devices preserved about ۹۵% of their efficiency.

Authors

Sekineh Hoseini

Damghan University

Mehdi Adelifard

School of Physics, Damghan University, Damghan, Iran

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