Temperature effect on carbon nanoscroll based transistors
Publish place: سومین کنگره بین المللی کامپیوتر، برق و مخابرات
Publish Year: 1395
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ITCC03_245
تاریخ نمایه سازی: 6 اردیبهشت 1396
Abstract:
Graphene nano scrolls as a new carbon allotropes based on its unique electrical properties have been explored extensively. The transmission coefficient as a main transport factor need to be explored in this study the transmission coefficient for one and two potential barriers are investigated. All theoretical expressions such as height, width of potential barriers, distance between them and carrier property are included to have exact value of transmission coefficient. Additionally as it is required in many electronic devices to specify conductance of component the exact determination of transmission coefficient especially for graphene based devices is analyzed. Non-isotropic character of transmission coefficient causes to have some extension on Landauer formalism to derive more accurate expression on graphene based transistors. Finally based on the proposed model the temperature effect on device characteristics is discussed.
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Authors
S.N Hedayat
Dept. of Physic, Urmia university, Urmia, Iran
M.T Ahmadi
Dept. of Physic, Urmia university, Urmia, Iran
H Sedghi
Dept. of Physic, Urmia university, Urmia, Iran
H Godarzi
Dept. of Physic, Urmia university, Urmia, Iran
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