The Effect of Adding InGaN Interlayer on AlGaN/GaN Double Channel HEMT for Noise Improvement
Publish place: Journal of Electrical Systems and Signals، Vol: 2، Issue: 1
Publish Year: 1393
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JESS-2-1_003
تاریخ نمایه سازی: 19 شهریور 1396
Abstract:
In this paper, the microwave noise of Al0.3Ga0.7N/GaN heterojunction high electron-mobility transistors (HEMTs) with three different structures is investigated by using TCAD extensive simulations. By inserting a 21 nm Al0.05Ga0.95N bottom barrier layer at 14 nm away from the AlGaN/GaN heterointerface, the device shows higher transconductance and lower minimum noise figure (NFmin) than conventional AlGaN/GaN HEMT. In order to further improve the device performance, a new AlGaN/GaN DC-HEMT structure is proposed by inserting a 3 nm In0.1Ga0.9N layer at 6 nm away from the Al0.05Ga0.95N/GaN heterointerface. Due to higher carrier density and mobility, AlGaN/GaN DC-HEMT with In0.1Ga0.9N shows higher transconductance and lower NFmin than Al0.3Ga0.7N/GaN DC- HEMT.
Authors
Robab Madadi
graduate of Islamic Azad University, Arak, Iran
Saeid Marjani
Electrical Engineering Department of Ferdowsi University of Mashhad, Iran.
Rahim Faez
Electrical Engineering Department of Sharif University of Technology, Tehran, Iran;
Seyed Ebrahim Hosseini
Electrical Engineering Department of Ferdowsi University of Mashhad, Iran.