Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering
Publish Year: 1395
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JTAP-10-3_004
تاریخ نمایه سازی: 27 مرداد 1397
Abstract:
Cadmium telluride (CdTe) is a p-type II-VIcompound semiconductor, which is an active componentfor producing photovoltaic solar cells in the form of thinfilms, due to its desirable physical properties. In this study,CdTe film was deposited using the radio frequency (RF)magnetron sputtering system onto a glass substrate. Toimprove the properties of the CdTe film, effects of twoexperimental parameters of deposition time and RF powerwere investigated on the physical properties of the CdTefilms. X-ray Diffraction (XRD), atomic force microscopy(AFM) and spectrophotometer were used to study thestructural, morphological and optical properties of theCdTe samples grown at different experimental conditions,respectively. Our results suggest that film propertiesstrongly depend on the experimental parameters and byoptimizing these parameters, it is possible to tune thedesired structural, morphological and optical properties.From XRD data, it is found that increasing the depositiontime and RF power leads to increasing the crystallinity aswell as the crystal sizes of the grown film, and all the filmsrepresent zinc blende cubic structure. Roughness valuesgiven from AFM images suggest increasing the roughnessof the CdTe films by increasing the RF power and depositiontimes. Finally, optical investigations reveal increasingthe film band gaps by increasing the RF power and thedeposition time.
Keywords:
Magnetron sputtering XRD AFM SEM CdTe
Authors
Z Ghorannevis
Department of Physics, Karaj Branch, Islamic Azad University, Karaj, Iran
E Akbarnejad
Plasma Physics Research Centre, Science and Research Branch, Islamic Azad University, Tehran, Iran
M Ghoranneviss
Plasma Physics Research Centre, Science and Research Branch, Islamic Azad University, Tehran, Iran