Strain I-MOS Transistor With an Elevated Impact-Ionization Region

An impact-ionization MOS (I-MOS) transistor with an elevated impact-ionization region (I-region) or the L-shaped I-MOS (LI-MOS) transistor has been proposed. The LI -MOS structure is more compact and compatible with conventional CMOS processes. In this paper, we discuss and explore the relationship and impact of length of spacer and discuss and explore the relationship and impact of strain and bandgap on the generation of impact-ionization carriers. In this paper we use SiGe to have a better subthereshold slope.

Keywords:

I-MOS Transistor , L-shaped I-MOS (LI-MOS) transistor , Elevated Impact-Ionization Region , threshold voltage , leakage current.