Displacement Fields Influence Analysis Caused by Dislocation Networks at a Three Layer System Interfaces on the Surface Topology
Publish place: Journal of Solid Mechanics، Vol: 11، Issue: 3
Publish Year: 1398
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JSMA-11-3_010
تاریخ نمایه سازی: 12 اسفند 1398
Abstract:
This work consists in a numerically evaluation of elastic fields distribution, caused by intrinsic dislocation networks placed at a nanometric trilayers interfaces, in order to estimate their influence on the surface topology during heterostructure operation. The organization of nanostructures is ensured by the knowledge of different elastic fields caused by buried dislocation networks and calculated in the case of anisotropic elasticity. The influence of elastic fields generated by induced square and parallel dislocation networks at CdTe / GaAs / (001) GaAs trilayer interfaces was investigated. By deposition, the nanostructures organization with respect to the topology was controled.
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Authors
A Boussaha
Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna ۲ Mostafa Ben Boulaid, Batna, Algeria
R Makhloufi
Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna ۲ Mostafa Ben Boulaid, Batna, Algeria
S Madani
Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna ۲ Mostafa Ben Boulaid, Batna, Algeria
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