فیلتر نتایج
نتایج 1 تا 10 از مجموع 36
Journal Paper
Modeling Graphene-based PIN-FET with Quantum Dot Channel
Authors: Karim Milanchian، Hakimeh Mohammadpour
Year 1402
Publish place: Journal of Optoelectronical Nanostructures Issue 4، Vol 8
Pages: 15 | Language: English
Journal Paper
Bio-molecular nano scale devices using first principle paradigm: A comprehensive survey
Authors: Debarati Dey Roy، Pradipta Roy، Debashis De
Year 1402
Publish place: International Journal of Nano Dimension Issue 2، Vol 14
Pages: 11 | Language: EnglishJournal Paper
Time Response of a Resonant Tunneling Diode Based Photo- Detector (RTD-PD)
Authors: Mohamad Ahmadzadeh، Abbas Ghadimi، Seyed Ali Sedigh Ziabari
Year 1400
Publish place: Journal of Optoelectronical Nanostructures Issue 1، Vol 6
Pages: 24 | Language: EnglishJournal Paper
A Computational Study on the Performance of Graphene Nanoribbon Field Effect Transistor
Authors: Maedeh Akbari Eshkalak، Rahim Faez
Year 1396
Publish place: Journal of Optoelectronical Nanostructures Issue 3، Vol 2
Pages: 12 | Language: English
Conference Paper
Effect of Mid-Gap States on Performance of Tunneling Field-Effect Transistor Based on Antimonene
Authors: Hossein N.Niknezhad، Shoeib Babaee Touski
Year 1402
Publish place: 3rd Intl. Conf. on Researches in Nanotechnology & Nanoscience
Pages: 10 | Language: EnglishJournal Paper
Design of nanoscale self switching diodes with high rectification ratio based on two-dimensional semiconductor hBCN
Authors: Ashkan Horri
Year 1401
Publish place: International Journal of Nano Dimension Issue 4، Vol 13
Pages: 6 | Language: EnglishJournal Paper
Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
Authors: Ali Naderi، Behrooz Abdi Tahne
Year 1396
Publish place: International Journal of Nano Dimension Issue 4، Vol 8
Pages: 10 | Language: EnglishJournal Paper
Theoretical computation of the quantum transport of zigzag mono-layer Graphenes with various z-direction widths
Authors: J. Jahanbin Sardroodi، S. Afshari، A. R. Rastkar Ebrahimzadeh، M. Abbasi
Year 1394
Publish place: International Journal of Nano Dimension Issue 1، Vol 6
Pages: 5 | Language: English
Conference Paper
Scaling Behavior of p-type Junctionless Field Effect Transistors with Different Channel Materials
Authors: F. Bajelan
Year 1401
Publish place: 7th International Conference on Electrical, Electronics and Smart Grid Engineering
Pages: 9 | Language: EnglishJournal Paper
Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
Authors: Maryam Faraji، Seyed Saleh Ghoreishi، Reza Yousefi
Year 1397
Publish place: International Journal of Nano Dimension Issue 1، Vol 9
Pages: 9 | Language: English
نتایج 1 تا 10 از مجموع 36