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فیلتر نتایج
Journal Paper
Design and Performance Analysis of ۶H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in ۱۰nm Technology
Authors:
A. Krishnamurthy
،
D. Venkatarami Reddy
،
E. Radhamma
،
B. Jyothirmayee
،
D. Sreenivasa Rao
،
V. Agarwal
،
B. Balaji
Year 1402
Publish place:
International Journal of Engineering (IJE) Issue 12، Vol 36
Pages:
8
| Language: English
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