A Design of Reconfigurable Dual Band LNA Based on 0.18 µm CMOS Technology and Current Reuse Technique

A new design of dual band switchable reconfigurable low noise amplifier (LNA) is presented and discussed in this paper. The proposed structure utilizes two matching LC tanks at the output and a single transistor switch at the input in order to exhibit frequency switchable function. Employing just a single switch avoids any sever degradation of the noise figure (NF). Moreover current reuse technique is used in order to improve the gain characteristic of the proposed LNA. The proposed reconfigurable LNA structure is designed based on 0.18 µm CMOS technology for switchable performances between wireless local area network (WLAN 2.4 GHz) and WiMAX (3.5 GHz) applications. The obtained results express that the presented LNA Structure has a |S21| more than 20 dB and NF less than 2 at its dual band switchable performances.

Keywords:

CMOS technology , Low noise amplifier , Reconfigurable structure