Design and Performance analysis of logic gates in 32nm CNTFET Technology
Publish Year: 1397
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
TECCONF03_124
تاریخ نمایه سازی: 5 آبان 1397
Abstract:
Silicon technology continues to scale down and is a dominant choice for high-performance digital circuits. Carbon Nanotube Field Effect Transistors (CNTFETs) are one of the emerging Candidates nanotechnology, which is showing high efficiency at small scales to replace mainstream CMOS for Integrated Circuits. In this paper, we have designed and studied the performance of several digital gates including 4:1 Mux, Half Adder, XOR and 4-bit ALU using CMOS & CNTFET technologies in 32nm node for high speed applications. The performances are evaluated and compared in terms of power consumption, delay and power delay product (PDP) and demonstrate the potential feasibility of CNTFET to replace CMOS transistors for design of digital circuits
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Authors
Hamed Pourkheyrollah
Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran
Behzad Namvar
Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran
Majid Shalchian
Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran
Hassan Ghafoorifard
Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran