Implementation of EIS for dopant profile analysis in n-type silicon
Publish place: Advanced Ceramics Progress، Vol: 3، Issue: 1
Publish Year: 1396
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_ACERPT-3-1_004
تاریخ نمایه سازی: 11 اردیبهشت 1400
Abstract:
An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and algorithm. Obtained results were compared with the results of calibrated ECV instrument and dopant profile-resistivity correspondence method. Cross-sectional imaging was used for confirming the estimated dopant diffusion depth.
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Authors
Ahmad Saraei
Semiconductors, Institute of materials and energy
Mohamad Javad Eshraghi
Semiconductor, Merc
Fariba Tajabadi
Nanomaterials and Advanced Materials, Institute of materials and energy
Abouzar Massoudi
Semiconductor, Merc