Empirical Tight Binding Calculation for bulk Wurtzite III-Nitride Semiconductor

We present an sp۳s* tight-binding model including spin -orbit interactions for the calculation of the electronic and optical properties of III-Nitride semiconductors. These materials are found to be direct-band-gap semiconductors with fundamental band gaps ranging from orange through the blue-green to the ultraviolet. The model incorporates nearest-neighbors. The tight-binding parameters are extrapolated from those of zincblende.

Keywords:

Tight Binding , III-Nitride , Electrical and optical properties , sp۳s* , Spin orbit interaction.