Effect of doped Zn–PbI۲ nanostructures on structural and electrical properties of photodetector applications

AbstractThe present study focuses on the structural and electrical properties of doped zinc–lead iodide (Zn–PbI۲) as-deposited film. Lead iodide (PbI۲) nanostructure was successfully prepared by thermal evaporation method on a glass substrate at room temperature. The analysis, characterization, and structural properties of PbI۲ were achieved using X-ray diffraction (XRD) and scanning electron microscopy. The PbI۲ was polycrystalline and had a hexagonal structure as proved using XRD. The measured values are in agreement with other experimental and theoretical data. Furthermore, the present research studied the effect of doping on the physical properties of lead iodide with zinc dopants at different weights (۰.۰۲, ۰.۰۴, ۰.۰۶, and ۰.۰۸) mg. The electrical properties of the fabricated metal–semiconductor–metal photodetector based on PbI۲ and Pb۱−xZnxI۲ layers prepared on glass substrates by thermal evaporation method were investigated. The obtained results of Schottky barrier heights for Pb۰.۹۸Zn۰.۰۲I۲ were significant. The current–voltage characteristics of the Pb۰.۹۸Zn۰.۰۲I۲ thin film have acted as a Schottky contact in dark and under white light, ۴۶۰-nm light. The light responsivity has shown a peak at ۴۶۰-nm chopped light. At a bias voltage of ۱, ۳, and ۵ V, the photocurrent rise and decay times were investigated. The device has shown faster response times for ۴۶۰-nm light. This fast response was attributed to the high quality of polycrystalline and showed a high quantum efficiency of ۹.۱۹ × ۱۰۲% when it was illuminated by ۴۶۰-nm light under the bias of ۳ V.

Keywords:

PbZnI nanostructures , – characteristics , MSM PD , Thermal evaporation method