Design and Characterization of Single Quantum Well GaAs-based Laser Diode
Publish place: Fourth International Conference on Soft Computing
Publish Year: 1400
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
CSCG04_147
تاریخ نمایه سازی: 23 اسفند 1400
Abstract:
The GaAs- based laser diode with single quantum well structure is theoretically designed and characterized using simulation software PICS۳D. The simulator self-consistently combines ۳D simulation of carrier transport, self-heating, and optical waveguiding. Simulation results show that proposed laser structure operates with multi- mode optical fields at ۰.۸۳۳-۰.۸۳۴ micron wavelength range. This situation is desirable for many optical systems
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Authors
Zahra Danesh Kaftroudi
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan, Rudsar-Vajargah, Iran;