Optimization of electron scattering from random potential barriers on the surface of topological insulators
Publish Year: 1400
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JITF-4-2_005
تاریخ نمایه سازی: 9 مرداد 1401
Abstract:
Optimization of electron scattering has been investigated using random potential barriers. Random pottential barriers can be defined in two ways: when these line defects are placed on the insulation surface, but strength of their potential is changing randomly, and the other is when potential barriers have a constant value, while their location on the surface of topological insulators is changing randomly. To observe the better passage of electrons, the probability of transmission in the random potential state is calculated N times. These N values are averaged and with the probability of transmission, in the local potential state is compared. It seems that, to propagating of incident electron for some amount of incident energy, the number of defects, strength of potential and even direction of propagation electron, to the same result for the local line defects is close. But for some amounts of incident energy or some structural changes show significant changes.
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Authors
حمید دهنوی
Department of Physics, Islamic Azad University, North Tehran Branch, Tehran, Iran
مهدی سعادت
Shahid Rajaee Teacher Training University, Tehran, Iran
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