FDLTD method for the Physical Simulation of Microwave FET Transistor

This paper describes an new application of weighted Laguerre polynomial functions to produce a unconditionally stable Finite-Difference Laguerre-Time-domain (FDLTD) scheme for simulation of the Drift-Diffusion Model (DDM) of microwave active devices. The unconditionally stability of FDLTD method leads to a significant reduction in the simulation time. For example, when 100 weighted Laguerre polynomial functions is used, FDLTD is 5 times faster than conventional FDTD method while they have the same degree of accuracy.

Keywords:

Microwave FET Transistor , Semiconductor Device , finite-difference Laguerre time-domain (FDLTD) , Drift-Diffusion Model