Feasibility of Digital Circuit Design based on Nanoscale Field-Effect Bipolar Junction Transistor
Publish Year: 1402
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JECEI-11-1_003
تاریخ نمایه سازی: 7 آبان 1401
Abstract:
kground and Objectives: The Field-effect Bipolar Junction Transistor (FEBJT) is a device with a bipolar junction transistor (BJT) characteristics except that it is designed with standard CMOS technology. Therefore, it can be implemented in nanometer dimensions without the usual restrictions in fabricating the nanoscale BJTs. In addition to the advantages that FEBJT has as a bipolar junction transistor in analog circuits, it can also be used to design digital circuits. Here, we have investigated the capability of FEBJT as the base of a new digital family in nanometer scales.Methods: To do this, we have designed and simulated an inverter logic gate based on FEBJT. We have presented this logic gate's static and dynamic assessment criteria and compared these characteristics with other technologies. Also, a three-stage ring oscillator circuit based on FEBJT is designed and presented. A three-dimensional TCAD Mixed-Mode simulator has been used for the simulations.Results: The value of maximum frequency, PDP, dynamic power, and ring frequency are calculated ۰.۲۵THz, ۳۸×۱۰-۱۷ J, ۹۴uW, and ۸۵GHz, respectively.Conclusion: The excellent function of the FEBJT-based inverter gate and oscillator demonstrates that this device can be used as the base of new digital circuits and can open a doorway to the nanoscale CMOS digital family.
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Authors
A. Shokri
Electrical Engineering Department, Shahid Rajaee Teacher Training University, Tehran, Iran.
M. Amirmazlaghani
Electrical Engineering Department, Shahid Rajaee Teacher Training University, Tehran, Iran.
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