Two and Three-Electrode Structure for Quantum-Dot Semiconductor Optical Amplifiers
Publish place: 20th Iranian Conference on Electric Engineering
Publish Year: 1391
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICEE20_439
تاریخ نمایه سازی: 14 مرداد 1391
Abstract:
To compensate for the decreasing carrier density in the far side of quantum-dot semiconductor optical amplifiers (QD-SOAs), which directly compromises the optical gain,multi-electrode approach for these devices is introduced. In our study two and three-electrode QD-SOA are studied and tried to establish a base for comparison between these multi-electrode techniques and constant form of injected current. The optical gain of QD-SOA is improved by nearly 10% throughdiscretizing the optimum non-uniform current and then applying it to multi-electrode structure. For doing so, the rateequation model is employed and solved through finite difference method and MATLAB ODE
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Authors
Ehsan Mohadesrad
Department of Electrical and Computer Engineering, Shahid Beheshti University, Tehran ۱۹۸۳۹۶۳۱۱۳, Iran