A CMOS Low-Power Noise Shaping-Enhanced SMASH ΣΔ Modulator

Publish Year: 1401
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:

JR_MJEE-16-1_009

تاریخ نمایه سازی: 6 آذر 1401

Abstract:

A discrete-time (DT) high-resolution and low-power sturdy multi-stage noise-shaping (SMASH) sigma-delta (ΣΔ) modulator is introduced. It proposes major solution for high-resolution applications relying on M-bit digital input-feedforward (DFF) technique which eliminates a power-hungry analog adder before the stage’s quantizer, decreases number of comparators for quantizer implementation and reduces the swing of the integrator’s output and a ۲nd-order noise-coupling (NC) technique realized by few extra analog paths and enhances the noise shaping of the modulator without adding active blocks. The effectiveness of the introduced modulator is supported by the behavioral simulation and extensive mathematical analyses. The proposed modulator along with conventional one is simulated in a ۰.۱۸μm CMOS technology. The results indicate an outstanding improvement in dynamic range (DR) and resolution with less complexity.

Authors

Habibeh Fakhraie

Department of Engineering, Central Tehran Branch, Islamic Azad University, Tehran, Iran

Tohid Moosazadeh

Department of Engineering, Central Tehran Branch, Islamic Azad University, Tehran, Iran

Reza Sabbaghy

Department of Electrical Engineering, Central Tehran Branch, Islamic Azad University, Niayesh Building, Emam Hasan Blvd, Pounak, Tehran, Iran

Alireza Hassanzadeh

ECE Department, Shahid Beheshti University, Tehran, Iran

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