On Increasing of Integration Rate of Elements of a Current Source Circuit
Publish Year: 1400
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_IJMAC-11-1_006
تاریخ نمایه سازی: 27 دی 1401
Abstract:
In this paper we introduce an approach to increase integration rate of elements of a current source circuit. Framework the approach we consider a hetero-structure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
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Authors
Evgeny L. Pankratov
Nizhny Novgorod State University, ۲۳ Gagarin Avenue, Nizhny Novgorod, ۶۰۳۹۵۰, Russia