Activation Coefficient Aspect of Complexion Agents on the Blue Shift of the ZnO Semi-conducted Nano-Particles

The study of semiconductor nanostructures has attracted considerable attentions because of the interests in fundamental physics as well as the great potential for applications in optoelectronic nanodevices. ZnO, with a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature is a II–VI compound semiconductor whose ionicity resides at the borderline between covalent and ionic semiconductor. At ambient conditions, the thermodynamically stable phase of ZnO is wurtzite. ZnO is a promising material for a broad range of high technology applications such as field emission, UV light-emitting diodes, piezoelectric devices, field effect transistors, field emission arrays, ceramics, transducers, varistors, thyristors, catalysis, optical coating, photovoltaics, nanoresonators, chemical sensors, gas sensors and biosensors [1-4]. As a material for UV-detection, zinc oxide has a number of advantages, such as insensitivity to visible light, high resistance to radiation damage, high breakdown strength and temperature stability, low cost and simplicity of device fabrication, while detectors of ultraviolet (UV) radiation are used in space research, missile warning systems, high temperature flame detection, environment monitoring and other areas [5]. Various methods are available for the synthesis of zinc oxide nano-particles and other nanostructures as hydrothermal methods, laser ablation, sol–gel method, electrochemical, spray pyrolysis, thermal decomposition, chemical vapor deposition, molecular beam epitaxy, wet chemical synthesis and combustion method. In this work, we have fabricated ZnO nano-particles via a simple hydrothermal method by two different complexion agents and investigated the effect of activation coefficient of the complexion agents on achieving finer nano-particles in order to increase their blue shift in respect to bulk ZnO