Effect of Mid-Gap States on Performance of Tunneling Field-Effect Transistor Based on Antimonene

In this paper, effects of mid-gap states on electrical behavior of Tunneling Field-Effect Transistor is investigated using non-equilibrium Green’s function through a tight-binding approach. Antimonene monolayer is utilized as a sample for channel. In the following, atom vacancy is created to generate mid-gap states. The creation of the mid-gap state due to the vacancy is shown using the local density of states for the TFET and the density of states for a ribbon. Furthermore, the effects of these mid-gap states on the ON-current and OFF-current are discussed.

Keywords:

Antimonene , NEGF , Tight-binding , Tunneling Field-Effect Transistor (TFET) , Two-dimensional material , Vacancy defect.