GROWTH OF ZnS SINGLE CRYSTALS BY CVT TECHNIQUE UNDER DIFFERENT MASS TRANSPORT STABILITY CONDITIONS

Abstract: A thermodynamic model was used to find out the optimum temperature for the growth of ZnS single crystals in closed ampoules by chemical vapor transport technique. Based on this model ۱۰۰۲ °C was found to be optimum temperature for ۲ mg/cm۳ concentration of transporting agent (iodine). ZnS Crystals were grown in optimum (۱۰۰۲ °C) and non-optimum (۹۰۲ °C and ۱۱۰۲ °C) temperatures. The composition structure and microstructure of the grown crystals were studied by Atomic absorption spectroscopy, X-ray diffraction and Scanning electron microscopy measurements. Properties of the grown crystals were correlated to the growth conditions especially a stability in mass transport along the closed tube length.

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Keywords: Semiconductors , Crystal growth , Electron microscopy , X-ray diffraction , Microstructure.