A Ultra Wideband (۵–۵۰ GHz) and Low Power Active Balun Using ۰.۱۸ µm CMOS technology

A new ultra wideband ۵ to ۵۰ GHz and low power single ended input, differential output active balun using ۰.۱۸µm CMOS technology is presented in this paper. Using a pair of common-source and common gate NMOS transistors with utilize active load PMOS transistors. Total power consumption of the proposed active balun circuit is ۵mw at the supply voltages of ±۱.۲v much less than ۱۱.۵mw of the conventional active balun.

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