Analysis and Design of a Voltage Controlled Attenuator in L Band Using CMOS ۱۸۰nm Technology

This paper presents an L-band voltage-controlled attenuator utilizing ۱۸۰nm CMOS technology, implemented by operating the CMOS in the linear region and employing a π-structure. To enhance the attenuator's dynamic range, two π-stages are connected in series. In order to mitigate the impact of parasitic capacitors, ۱۰kΩ resistors are employed in series with the transistors in both the series and parallel arms. The Cadence Spectre RF software simulation results indicate that the proposed circuit has an insertion loss of below ۶dB and a dynamic range of approximately ۳۸dB within the ۱-۲ GHz frequency range. Moreover, the results reveal that both S۱۱ and S۲۲ remain below -۷dB throughout the aforementioned frequency range, while the attenuation level demonstrates satisfactory linearity with respect to the control voltage.

Keywords:

Attenuator , Voltage-controlled , L-band , π-model , Dynamic range , Cadence Spectre RF