Design and Implementation of Ultra Low Dropout Regulator
Publish place: 6th Conference of Industries and Mines R&D Centers
Publish Year: 1386
Type: Conference paper
Language: English
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Document National Code:
CIMRDC06_027
Index date: 31 October 2006
Design and Implementation of Ultra Low Dropout Regulator abstract
Today low dropout regulators are widely used in Low Power circuits. This paper presents the design and implementation of a LDO regulator with high current and very low dropout voltage. One of the advantages of this circuit is using an n-channel MOSFET as power transistor. In this circuit Gate Voltage of MOSFET should be higher than input voltage, which is carried by a voltage up converter. The Implemented LDO is designed for a voltage of 11V which with a current of 1A the maximum Dropout will be 25mV, which shows improvement in comparison to conventional regulators.
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Design and Implementation of Ultra Low Dropout Regulator authors
Ehsan Rokhsat
DigitalClone Corporation