Simulation of the Effect of Gallium Arsenide/Aluminum Gallium Arsenide Multilayer Material Structure on LED Performance

In various researches, the effect of different types of semiconductor materials on the performance of light diodes has been investigated. Gallium arsenide and aluminum gallium arsenide are among the materials used for light diodes. The use of multilayer structures in light-emitting diodes can help improve their performance; Because these structures can improve interactions and light radiation and convert more optimal energy into light. Researchers are optimizing and designing light-emitting diodes to increase light intensity with less energy consumption as light-emitting diodes gradually replace incandescent bulbs. In this study, multilayer photodiode structures using gallium arsenide/gallium aluminum arsenide semiconductors are investigated and simulated, and the results of the article show that multilayer photodiode structures with gallium arsenide/gallium aluminum arsenide semiconductors, by simulating and examining electric fields, potential, radiation intensity And the consumption power of light diodes helps to optimize and achieve optimal performance. This research can be a guide for the development and improvement of light diodes with less energy consumption and better performance.

Keywords:

Light diodes , gallium arsenide , aluminum gallium arsenide , radiation intensity