The Effect of Doping and the Thickness of the Layers on CIGS Solar Cell Efficiency
Publish place: Journal of Optoelectronical Nanostructures، Vol: 1، Issue: 1
Publish Year: 1395
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JOPN-1-1_002
تاریخ نمایه سازی: 25 بهمن 1402
Abstract:
The main problemswith the use of fossil fuels is the restrictions on their access and the detrimental consequences of their use which causes a threat to human health and quality of life. Consequently, the use of other energy sources has become necessary. Renewable Energy as a permanent and clean energy source is an answer to this problem. One such energy source includes photovoltaic solar energy that is widely available as a reliable energy source. Research and Development of Photovoltaic Energy in general, will reduce costs and improve efficiency in both areas. CIGS solar cells have higher efficiency in comparison with other cells. Ion implantation and doping technique offers the unique structure of a solar cells. This paper will examine the performance of solar cells with Cu In۱-x Gax Se۲ structure. This willbe performed by Silvaco software. Effect of doping phosphorus (p) and Natrium (Na), as well as the value of x and thethickness of the various layers of the solar cell, on the efficiency of the cell, have been studied.
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Authors
Sayed Mohammad Sadegh Hashemi Nassab
Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.
Mohsen Imanieh
Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.
Abbas Kamaly
Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.
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