The influence of substrate preparation conditions on the Raman spectra of In۲S۳ thin films prepared by physical vapor deposition

In this paper, we employed Raman spectroscopy toinvestigate Indium sulfide thin layer films deposited onglass substrates using the PVD method. The results showedthat the bandwidth and Raman shift of different In۲S۳ thinfilms depended on the annealing temperature. In addition,the crystallization stage from tetragonal to cubic occurredat the excessive temperature range of ۳۵۰-۴۰۰ °C. TheRaman spectroscopy of the In۲S۳ thin films beforeannealing and at ۳۰۰ °C indicated the existence of β- In۲S۳at ۷۰, ۱۶۶ and ۲۸۱ cm-۱ in the active modes of the spectra.New modes that were related to α-In۲S۳ appeared at ۱۲۶,۲۴۴, and ۲۶۶ cm-۱ after thermal treatment at ۴۰۰ °C for ۳۰and ۶۰ min. Our results are in agreement with the phasetransitions observed from the XRD analysis of In۲S۳ thinfilms. There are few reports about the Raman spectroscopyof In۲S۳ thin layer films deposited using vacuum thermalevaporation. In the present paper, the Raman spectra ofIn۲S۳ thin films with different thicknesses as well as theeffects of temperature on their depositions in vacuum wereexamined.

Keywords:

buffer layer , In۲S۳ , Raman spectroscopy , structure , Thin films