Fabrication Of Cu(In,Ga)Se۲ Solar Cells With In۲S۳ Buffer Layer By Two Stage Process

Cu(In,Ga)Se۲ thin films (CIGS) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of Co-evaporated metallic precursors in Se-containing environment under N۲ gas flow. Structural properties of prepared thin film were studied. To characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were performed. Results shows that the structural and optical properties of Cu(In,Ga)Se۲ thin films strongly depend on the growth condition, charactristics of substrate and chemical composition. In۲S۳ thin layer has been used as buffer layer in CIGS solar cells and physical properties of them investigated. Solar cells were completed by vacuum deposition of ZnO/ZnO:Al layers and Ni/Al contact fingers. The surface morphology and bulk composition of thin films were investigated by scanning electron microscopy (SEM) equipped with energy-dispersive X-ray spectroscopy (EDS). The optical testing was carried out by recording transmittance spectra of the samples by spectrophotometers in the spectral range ۱۹۰–۳۰۰۰ nm at a resolution of ۱ nm. The better conversion efficiencies were around ۱۲.۰ %.

Keywords:

buffer layer , Cu(In , Ga)Se۲ , In۲S۳ , morphology , optical property , Solar Cell