Observation of Raman Gain in Reduced Length of Bismuth Erbium Doped Fiber

Raman amplification of a ۴۹ cm Bismuth oxide (Bi۲O۳) as a nonlinear gainmedium based erbium doped fiber amplifier (EDFA) is reported in new and compactdesign in near infrared spectral regions. The bismuth glass host provides theopportunity to be doped heavily with erbium ions to allow a compact optical gain fiberamplifier design by using reduced fiber length and the ۱۴۸۰ nm low pump poweraround ۱۵۰ mW. A extended Raman amplification bandwidth of ۴۵ nm, from ۱۵۲۰-۱۵۶۵ nm (C-band window) wavelengths is empirically proposed in a backward anddualwavelength pumped Bi-EDF by employing ۳۵۰ mW Raman pump in ۱۴۴۰ nm.Because of the short length gain medium as a nonlinear Bi-EDF, amplification of ۳ dBis achieved over a C-band wavelength range. This simple C-band Raman amplifierbased Brillouin and ASE backscattering was constructed to test the forward, backwardand dual-wavelength pump laser and on-off gain. A peak gain of ۱.۵۳ dB was obtainedwith a ۳-dB bandwidth of ۴۵ nm that the varieties of gain is ۲.۰۲ dB around ۱۵۴۵ nm inbackward pumping design. It array will be employ for sensing, spectroscopy andtelecommunication systems.

Keywords:

Bi-EDF , Compact gain medium , C-band , Dual wavelength source , Raman gain