Synthesis, Characterization and Scintillation Response of ZnWO۴-GO Nanocomposite
Publish place: Journal of Composites and Compounds، Vol: 4، Issue: 12
Publish Year: 1401
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JRCC-4-12_005
تاریخ نمایه سازی: 6 اسفند 1402
Abstract:
Graphene-based oxide nanocomposite materials have been commonly used in various applications due to their novel features. In this study, zinc tungstate /graphene-oxide composite nanoparticles (ZnWO۴/GO CNPs) were synthesized by a simple chemical method and their structural and optical properties were investigated. Results from EDX verified the presence of associated elements in the structure. The morphology, particle size and structural parameters were also studied and reported. The prepared composite was in monoclinic wolframite crystalline phase with spherical uniformly morphology and average particle size of ۲۹۹ nm. Under UV and alpha ray irradiation, the prepared ZnWO۴/GO CNPs showed blue-green emissions and strong scintillation sensitivity respectively at room temperature. The results showed that ZnWO۴/GO CNPs can be a suitable candidate for a wide range of applications in optoelectronic devices.Graphene-based oxide nanocomposite materials have been commonly used in various applications due to their novel features. In this study, zinc tungstate /graphene-oxide composite nanoparticles (ZnWO۴/GO CNPs) were synthesized by a simple chemical method and their structural and optical properties were investigated. Results from EDX verified the presence of associated elements in the structure. The morphology, particle size and structural parameters were also studied and reported. The prepared composite was in monoclinic wolframite crystalline phase with spherical uniformly morphology and average particle size of ۲۹۹ nm. Under UV and alpha ray irradiation, the prepared ZnWO۴/GO CNPs showed blue-green emissions and strong scintillation sensitivity respectively at room temperature. The results showed that ZnWO۴/GO CNPs can be a suitable candidate for a wide range of applications in optoelectronic devices.
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Authors
Sadegh Azadmehr
Faculty of Physics, Semnan University, P.O. Box:۳۵۱۹۵ ۳۶۳, Semnan, Iran
Mjid Jafat Taftreshi
Faculty of Physics, Semnan University, P.O. Box:۳۵۱۹۵ ۳۶۳, Semnan, Iran
Sanaz Alamdari
Faculty of Physics, Semnan University, P.O. Box:۳۵۱۹۵ ۳۶۳, Semnan, Iran
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