All range gradually distributed impurity inCNTFETs to manage the current ratio: Numericalsimulation using Poisson and Schrödinger equations

By using self-consistent solution of 2-D Poisson–Schrodinger equations, within the nonequilibrium Green’sfunction (NEGF) formalism, gradually distributed impurityprofile is examined in carbon nanotube field effect transistors(CNTFETs). The outputs show that the investigated profilewill result in more ON to OFF current ratio by managingcarrier transport between adjacent regions. Cylindricalstructure of CNTFET is studied with numerical simulation.The proposed profile is more efficient than basic profile fordigital application. The comparisons are performed in termsof ON current, OFF current, and ON/OFF current ratio atequal simulation conditions. All investigations show the betteroutputs for proposed profile.

All range gradually distributed impurity inCNTFETs to manage the current ratio: Numericalsimulation using Poisson and Schrödinger equations Keywords:

CNTFET , Gradually profile , Current ratio , NEGF , Poisson equation , Schrodinger equation.