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Effect of appropriate ETL on efficiency of CsPbI3 perovskite solar cell device viaSCAPS simulation

Publish Year: 1403
Type: Conference paper
Language: English
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MEMCONF13_032

Index date: 5 November 2024

Effect of appropriate ETL on efficiency of CsPbI3 perovskite solar cell device viaSCAPS simulation abstract

This study investigates the impact of an appropriate electron transport layer (ETL) on the efficiency ofCsPbI3 perovskite solar cell devices using SCAPS simulation. The objective is to optimize the ETL toenhance device performance by analyzing various ETL materials and their influence on key parameterssuch as open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and overall powerconversion efficiency (PCE). Simulations were performed to compare the effectiveness of differentETLs, including TiO2, PCBM, and SnO2. The results indicate that SnO2 as the ETL provides the highestefficiency due to its favorable energy band alignment and superior electron mobility, leading to reducedrecombination losses. The optimized device achieved a PCE of 18.7%, with a Voc of 1.15 V, Jsc of22.4 mA/cm², and an FF of 75.3%. This study concludes that selecting an appropriate ETL is crucial formaximizing the performance of CsPbI3 perovskite solar cells, highlighting SnO2 as a promisingcandidate for future high-efficiency solar cells..

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Effect of appropriate ETL on efficiency of CsPbI3 perovskite solar cell device viaSCAPS simulation authors

Mir Alireza Faghani Tolon

Sharif university of technology, Tehran, Iran

Mohammadreza Falaki

Sharif university of technology, Tehran, Iran