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Crystalline Silicon Solar Cell Engineering to Improve Fill Factor, Open Circuit Voltage, Short Circuit Current and Overall Cell Efficiency

Publish Year: 1393
Type: Journal paper
Language: English
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Document National Code:

JR_MJEEMO-14-4_002

Index date: 11 March 2025

Crystalline Silicon Solar Cell Engineering to Improve Fill Factor, Open Circuit Voltage, Short Circuit Current and Overall Cell Efficiency abstract

Design and optimization of a single crystalline silicon (c-Si) solar cell is performed to achieve the maximum light conversion efficiency. Various parameters such as doping concentration and thicknesses, and geometrical dimension of surface pyramids are studied. The inverted surface pyramid is used to increase the efficiency of the solar cell, and engineered oxide layer is used as the passivation and anti-reflect layer. Semi-analytic modeling of the output parameters of the solar cell, and numerical simulation for the structures are performed for the optimization. Fill factor (FF) of 85.4%, open circuit voltage (VOC) of 761 mV, short circuit current density (JSC) of 40.1 mA/cm2 and the overall cell efficiency of 26.3% are achieved. The optimization procedure leads to 1.5% efficiency increase in compare with the similar works.

Crystalline Silicon Solar Cell Engineering to Improve Fill Factor, Open Circuit Voltage, Short Circuit Current and Overall Cell Efficiency Keywords:

Index terms- silicon solar cell- efficiency- Ion implantation- Metal contact- Surface texturing

Crystalline Silicon Solar Cell Engineering to Improve Fill Factor, Open Circuit Voltage, Short Circuit Current and Overall Cell Efficiency authors

هادی بشیری

Ph.D. Student, Department of Electrical Engineering, Iran, University of Science and Technology,Tehran, Iran

محمد عظیم کرمی

Corresponding Author: Assistant Professor, Department of Electrical Engineering, Iran University of Science and Technology, Tehran,

شهرام محمد نژاد

Professor, Department of Electrical Engineering, Iran University of Science and Technology, Tehran, Iran,