Design of High Performance CNFET-Based Full Adder Cell
Publish Year: 1392
Type: Conference paper
Language: English
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Document National Code:
NCNTA02_147
Index date: 5 September 2014
Design of High Performance CNFET-Based Full Adder Cell abstract
This paper presents high performance 1-bit Carbon Nanotube Field Effect Transistor (CNFET) based full adder cell.The proposed design has the advantage of full voltage swing of output nodes, high driving power, and capability of working in high frequencies for low voltages application, The proposed full adder cell is composed of 6-transistor XOR-XNOR module supporting complementary outputs and multiplexing. To design our full-adder cell, CNFETs with different threshold voltages and number of nano tubes are used.Proposed full adder is simulated using HSPICE based on CNFET model with 0.9V,0.8V and 0.7V supply voltages. Simulation result shows that the proposed design consumes less power and has a lower power-delay product compared to other CNFET-based full adder cells.
Design of High Performance CNFET-Based Full Adder Cell Keywords:
Carbon Nanotube Field Effect Transistor (CNFET) , Full Adder , exclusive-OR (XOR) , exclusive-NOR (XNOR) , low power
Design of High Performance CNFET-Based Full Adder Cell authors
Zoheir Kordrostami
Dept. of Elect. Eng., Shiraz University of Technology, Shiraz, Iran
Maryam Esfandiyar
Dept. of Elect. Eng., Bushehr Islamic Azad University, Bushehr, Iran
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