Proving Existence One Suitable Oxide Phase Simultaneously With Deposition for Fabrication Ti/p-Si Schottky Diode by DC Magnetron Sputtering

In this paper, Ti/p- si schottky diode has been fabricated by deposition a titanium film on p-si substrate by dc magnetron sputtering. Electrical properties schottky junction inclusive 3 main parameters: ideality factor (n), series resistance (Rs) and barrier height (Φb) were determined by 3 analysis methods: current-voltage, Cheung function and Norde function. As result the calculated values outcome by 3 analysis methods averagely were obtained equal to 2.475, 27.07kΩ and 0.88 ev, respectively.Direct calculation series resistance and compare that with the average value obtain from 3 analysis methods that mentioned illustrate that without attention to XRD analysis can deduce at least one oxide phase was formed on Ti layer.

Keywords:

Schottky diode , Titanium Layer , Series resistance , Oxide phase