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Proving Existence One Suitable Oxide Phase Simultaneously With Deposition for Fabrication Ti/p-Si Schottky Diode by DC Magnetron Sputtering

Publish place: The Second National Conference on Applied Research in Mathematics and Physics
Publish Year: 1393
Type: Conference paper
Language: English
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Link to this Paper:
https://civilica.com/doc/381095

Document National Code:

MATHPHY02_053

Index date: 21 September 2015

Proving Existence One Suitable Oxide Phase Simultaneously With Deposition for Fabrication Ti/p-Si Schottky Diode by DC Magnetron Sputtering abstract

In this paper, Ti/p- si schottky diode has been fabricated by deposition a titanium film on p-si substrate by dc magnetron sputtering. Electrical properties schottky junction inclusive 3 main parameters: ideality factor (n), series resistance (Rs) and barrier height (Φb) were determined by 3 analysis methods: current-voltage, Cheung function and Norde function. As result the calculated values outcome by 3 analysis methods averagely were obtained equal to 2.475, 27.07kΩ and 0.88 ev, respectively.Direct calculation series resistance and compare that with the average value obtain from 3 analysis methods that mentioned illustrate that without attention to XRD analysis can deduce at least one oxide phase was formed on Ti layer.

Proving Existence One Suitable Oxide Phase Simultaneously With Deposition for Fabrication Ti/p-Si Schottky Diode by DC Magnetron Sputtering Keywords:

Schottky diode , Titanium Layer , Series resistance , Oxide phase

Proving Existence One Suitable Oxide Phase Simultaneously With Deposition for Fabrication Ti/p-Si Schottky Diode by DC Magnetron Sputtering authors

M shahryari

Department of physics, Faculty of Science, Islamic Azad University, Karaj Branch, Karaj, Iran

sh nanekarani

Department of physics, Faculty of Science, Islamic Azad University, Karaj Branch, Karaj, Iran

مراجع و منابع این Paper:

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